Electrical Properties of the N-type Ferromagnetic Semiconductor HgCr1.9In0.1Se4/Ag Schottky-Barrier Diode

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Abstract
Measurements of the voltage-capacitance and voltage-current characteristics were performed on n-type ferromagnetic semiconductor HgCr1.9In0.1Se4/Ag Schottky-barrier diodes from 90 to 296 K in magnetic fields up to 1.19×106 A/m. The barrier-height of these diodes increases as the temperature is raised and decreases with the increase of the magnetic field in a manner similar to the optical absorption edge of the HgCr1.9In0.1Se4 single crystal. Temperature and magnetic field variations of both the barrier-height of these diodes and the optical absorption edge of the HgCr1.9In0.1Se4 single crystal can be explained consistently in terms of those of the electron affinity for HgCr1.9In0.1Se4 which decreases with the rise in temperature and increases with increasing magnetic field.

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