A two-dimensional analysis of gallium arsenide junction field effect transistors with long and short channels
- 31 December 1972
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (12) , 1353-1361
- https://doi.org/10.1016/0038-1101(72)90129-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Computer Aided Two-dimensional Analysis of the Junction Field-effect TransistorIBM Journal of Research and Development, 1970
- Characteristics of junction field effect devices with small channel length-to-width ratiosSolid-State Electronics, 1967
- MEASUREMENT OF THE VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDEApplied Physics Letters, 1967
- Calculation of the velocity-field characteristic for gallium arsenidePhysics Letters, 1966
- Theory of negative-conductance amplification and of Gunn instabilities in "two-valley" semiconductorsIEEE Transactions on Electron Devices, 1966