A Method of Forming Thin and Highly Reliable Gate Oxides: Two Step Oxidation

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Abstract
A new two step oxidation has been developed as a method of forming thin and highly reliable gate oxides used in MOS LSI's. It consists of initial oxidation at low temperature with low concentration and following treatment at high temperature in a mixture of , , and gases. This report mainly covers oxide defect reduction effect and passivation effect of oxides formed by the two step oxidation. The oxide defect density depends on the condition of the initial oxidation and following heat‐treatment. Concretely, it is effective, for defect reduction, to use oxide as the initial oxide and give it high temperature treatment for over 20 min. The passivation effect depends on the concentration and the treatment time at the treatment. It became evident that over 90 min treatment is necessary for passivation at 1150°C with 3% . According to SIMS analysis, the mechanism of this passivation is fundamentally similar to that of a usual oxidation. Many applications may be expected for this two step oxidation.

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