Diffusion from implanted layers with consideration of the out-diffusion on the surface
- 16 April 1975
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 28 (2) , K163-K166
- https://doi.org/10.1002/pssa.2210280255
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Technique for determining concentration profiles of boron impurities in substratesJournal of Applied Physics, 1972
- Diffusion of Boron from Shallow Ion Implants in SiliconJournal of the Electrochemical Society, 1972
- Enhanced Diffusion and Out-Diffusion in Ion-Implanted SiliconJournal of Applied Physics, 1970
- Diffusion and defect annealing in silicon doped by phosphorus ion implantationPhysica Status Solidi (a), 1970
- The application of diffusion theory to inert-gas motion in ion-bombarded solids: Diffusion theory for discrete media, part IIIJournal of Nuclear Materials, 1966