Variable-range hopping in InP close to the metal-insulator transition
- 10 September 1987
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 20 (25) , L607-L610
- https://doi.org/10.1088/0022-3719/20/25/003
Abstract
Analysis of conductivity data taken over the temperature range 4.2-0.05 K for a compensated sample of InP on the insulating side of, but very close to, the metal-insulator transition in terms of the relation sigma = sigma 0exp(-(T0/T)s) gives s=0.25 instead of s=0.5 previously obtained for a sample at some distance from the transition. Application of a small magnetic field produces behavior characteristic of the metallic regime and so confirms the phase diagram proposed by Shapiro.Keywords
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