Rapid annealing of silicon with a scanning cw Hg lamp
- 1 October 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (10) , 7109-7111
- https://doi.org/10.1063/1.330022
Abstract
A scanning arc lamp annealing system has been built using a 3-in.-long mercury arc lamp with an elliptical reflector. The reflector focuses the light into a high intensity narrow line source. Silicon wafers implanted with 100-KeV 75As+ to 1×1015 cm−2 have been uniformly annealed with a single scan, resulting in complete activation and negligible redistribution of the implanted species. Using a scan rate of 1 cm/s, entire 3-in. wafers have been annealed in less than 10 sec with this system.This publication has 6 references indexed in Scilit:
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