Optical window in strained-layer Si/Ge microstructures
- 31 July 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (5) , 484-485
- https://doi.org/10.1063/1.101860
Abstract
Theoretical predictions are presented of electronic and optical properties of the Si/Ge (2:6) superlattice grown on (001) SiGe buffers. It is shown that the buffer layer on which the superlattice is grown controls the polarization isotropy of the fundamental cross-gap transition and may be used to engineer an optical window for direct gap behavior.Keywords
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