Structural and optical properties of CoxIn2S3+x thin films grown by spray pyrolysis method
- 1 October 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (7) , 2357-2360
- https://doi.org/10.1063/1.337145
Abstract
CoxIn2S3+x thin films with various relative compositions were grown on thoroughly cleaned glass plates by the spray pyrolysis method. The substrate temperature during growth was maintained at 270 °C and the film then annealed in a vacuum chamber at 2×10−5 Torr at 500 °C for 30 min. The grown CoxIn2S3+x thin films, which had a composition of x=0.0–0.6, showed the tetragonal structure of In2S3, but above x=0.6 the films were amorphous. The energy gap for these films decreased with increasing x composition, and the impurity absorption spectra in near infrared region, ascribed to Co2+ ions, were observed at 13 333, 5970, and 4166 cm−1, which are the 4A2(F)−4T1(P), 4A2(F)−4T1(F), and 4A2(F)−4T2(F) transitions, respectively.This publication has 4 references indexed in Scilit:
- Structural determination of CoIn2S4 single crystal spinelSolid State Communications, 1983
- On the Site Symmetry of Co2+ in CdIn2S4Journal of the Physics Society Japan, 1979
- Vapour growth of three In2S3 modifications by iodine transportJournal of Crystal Growth, 1975
- Vapour and flux growth of γ-In2S3, a new modification of insium sesquisulphideJournal of Crystal Growth, 1973