Electron beam excited free exciton luminescence of GaSe

Publisher Website
Google Scholar
Abstract
On the layered semiconductor GaSe low temperature cathodoluminescence experiments are performed. Both, the temperature dependence of the free exciton luminescence and kinetical considerations lead to the conclusion that the GaSe band structure causes a peculiar temperature dependence of the exciton band population. The latter is established as a balance between recombination, the formation of excitons from holes and direct or indirect electrons, as well as dissociation of excitons.

This publication has 10 references indexed in Scilit: