Chloride Multi-Source Epitaxial Growth of CuGaS2 and CuGaSe2
- 1 January 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (S3)
- https://doi.org/10.7567/jjaps.32s3.142
Abstract
A novel epitaxial growth technique–chloride multisource epitaxial growth–for ternary compounds is described. Beams of the source vapors, CuCl, Ga and S (Se), are supplied into a high-purity nitrogen or hydrogen atmosphere of 10-4 Torr. The c-axis epitaxial growths of CuGaS2 and CuGaSe2 are attained on GaAs (100) substrates at 600–620°C. The effects of the CuCl/Ga supply ratio on the layer growth are examined. The epitaxial layers are strained compressively along the c-axis by the thermal expansion mismatch between the grown layer and the substrate.Keywords
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