Electron transport properties of InP
- 1 July 1980
- journal article
- Published by Canadian Science Publishing in Canadian Journal of Physics
- Vol. 58 (7) , 923-930
- https://doi.org/10.1139/p80-127
Abstract
Measurements of electrical conductivity σ and Hall coefficient RH have been made as a function of temperature in the range room temperature to 250 °C and as a function of magnetic field up to 3.2 T on single crystal n-type samples of InP with carrier concentrations in the range 3.5 × 1021 to 1.2 × 1024 m−3. Theoretical calculations of σ and RH have been made using the method of Fletcher and Butcher and the resulting values fitted to the experimental data by using various scattering parameters as adjustable. The parameters so obtained have then been used to predict further magnetoresistance values and values of thermoelectric power and Nernst–Ettingshausen coefficient. The predicted values of magnetoresistance and thermoelectric power show good agreement with experimental values but not those of the Nernst–Ettingshausen coefficient, possibly due to experimental problems.Keywords
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