On the photoionization of deep impurity centers in semiconductors
- 1 September 1965
- journal article
- research article
- Published by Elsevier in Solid State Communications
- Vol. 3 (9) , 299-302
- https://doi.org/10.1016/0038-1098(65)90039-6
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Photoionization Cross Section of NeonPhysical Review B, 1965
- Absorption spectrum of arsenic doped siliconJournal of Physics and Chemistry of Solids, 1958
- Absorption spectra of impurities in silicon—IJournal of Physics and Chemistry of Solids, 1956
- Optical Properties of Indium-Doped SiliconPhysical Review B, 1955