Preparation of Homogeneous n-Type InSb by Thermal-Neutron Irradiation

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Abstract
Thermal neutron irradiation of high‐purity (uncompensated, n=4×1013 cm−3) InSb at ambient temperature has been employed to produce n‐type material with n=1014−1017 cm−3. The transmutation end products are 98% Sn and 2% Te, both donors. A detailed prescription for producing samples with an accurate control of doping concentration (∼7%), a mobility (μ) at 77°K that is 80%–100% of the highest obtained by other methods, and high homogeneity, is given. Although the reported homogeneity is about 2%, the method is, in principle, capable of much greater homogeneity. A contribution to the nuclear spin‐lattice relaxation rate (1/T1) caused by radiation damage is identified. The changes in n, μ, 1/T1, and homogeneity caused by annealing at temperatures up to 450°C are also presented.

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