Design and fabrication of traveling wave electroabsorption modulator

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Abstract
Semiconductor electroabsorption modulator (EAM) is a promising alternative to lithium niobate modulator for digital and analog fiber optic links due to its inherent small size, high modulation efficiency, and potential of monolithic integration with other electronic and optoelectronic components. For high-speed application, the bandwidth of the lumped element EAM is known to be RC-time limited. To achieve an ultra large bandwidth in lumped element EAM, the modulation efficiency has to be greatly sacrificed. This is especially critical in analog operation where RF link loss and noise figure must be minimized. To overcome the RC bandwidth limit and to avoid significantly compromising the modulation efficiency, the traveling wave electroabsorption modulator has been proposed and experimentally investigated by several authors.

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