The mechanism of iron gettering in boron-doped silicon

• 1 January 1996
• journal article
• Published by AIP Publishing in Applied Physics Letters
• Vol. 68  (1) , 51-53
• https://doi.org/10.1063/1.116754

Abstract

Keywords

• MATERIALS SCIENCE
• CONTAMINATION
• IMPURITIES
• GETTERING
• SILICON
• IRON
• CRYSTAL DEFECTS
• ION IMPLANTATION
• MASS SPECTROSCOPY
• ANNEALING
• SECONDARY ION MASS SPECTROMETRY