Process for Forming Passivated Metal Interconnection System with a Planar Surface

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Abstract
The planarization characteristics of polyimide films were investigated for use in a multilevel, metal‐insulator structure. Results showed that planarization is dependent on the geometry of the metal pattern. Therefore, a simple coating and etchback technique does not produce planarization over a typical metallization pattern. This paper describes a new, experimental process for fabricating a multilevel, metal‐insulator structure with a planar surface. As a result of the planar structures, uniform narrow linewidths can be maintained on all levels of metallization. Good edge coverage of metal and insulators is also obtained on all levels.

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