Low-noise operation in buried-channel MOSFET's

1 July 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 6 (7) , 317-319
https://doi.org/10.1109/edl.1985.26140

Abstract

Noise measurements in buried-channel MOSFET's are presented on various operating conditions. A new noise source has been observed in the weak inversion regime of the MOSFET's. By avoiding this noise source and other known noise sources in buried-channel devices, a good noise performance of MOS analog circuits has been obtained.

Keywords

VOLTAGE
MOSFET CIRCUITS
KIRCHHOFF'S LAW
INVERTERS
DRIVER CIRCUITS
CIRCUIT NOISE
RESISTORS
NOISE MEASUREMENT
NEODYMIUM
IMPACT IONIZATION

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