Theory of 1/ f noise in bipolar silicon planar transistors
- 5 March 1970
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 6 (5) , 128-130
- https://doi.org/10.1049/el:19700087
Abstract
A theory of 1/f low-frequency noise in silicon planar transistors is developed. It relates this noise to fluctuations in base current produced by fluctuations of occupied traps in the silicon dioxide. It is shown that the theoretical relationship of noise is consistent with experiment.Keywords
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