Morphologic study of (100) single crystal diamond films epitaxially grown by chemical vapor deposition
- 1 September 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 132 (1-2) , 200-204
- https://doi.org/10.1016/0022-0248(93)90262-u
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Characterization of an epitaxial-growth diamond thin filmJournal of Physics: Condensed Matter, 1992
- Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor depositionApplied Physics Letters, 1992
- Microstructure and orientation effects in diamond thin filmsJournal of Applied Physics, 1991
- Epitaxial Growth of High Quality Diamond Film by the Microwave Plasma-Assisted Chemical-Vapor-Deposition MethodJapanese Journal of Applied Physics, 1990
- Diamond Films Synthesized by Microwave Plasma CVD of Ethyl Alcohol, etc.Japanese Journal of Applied Physics, 1988
- Diamond synthesis from gas phase in microwave plasmaJournal of Crystal Growth, 1983