Electron-Phonon and Phonon-Phonon Interactions Under Laser Annealing Conditions
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Brillouin study of acoustic phonon softening and optical absorption coefficients of ultraheavily doped n-SiSolid State Communications, 1984
- Resonance Raman scattering in Si at elevated temperaturesPhysical Review B, 1984
- Optical functions of silicon between 1.7 and 4.7 eV at elevated temperaturesPhysical Review B, 1983
- Time-Resolved Reflectivity Measurements of Femtosecond-Optical-Pulse-Induced Phase Transitions in SiliconPhysical Review Letters, 1983
- Time-Resolved Study of Silicon During Pulsed-Laser AnnealingMRS Proceedings, 1983
- Raman scattering with nanosecond resolution during pulsed laser annealing of siliconApplied Physics Letters, 1982
- Comments on the plasma annealing model to explain the dynamics of pulsed laser annealing of ion-implanted siliconJournal of Applied Physics, 1982
- Melting phenomena and pulsed-laser annealing in semiconductorsJournal of Applied Physics, 1981
- Pulsed–Raman Measurements of Temperature When Large Temperature Variations and Gradients are PresentMRS Proceedings, 1981
- Auger coefficients for highly doped and highly excited siliconApplied Physics Letters, 1977