Modulation bandwidth enhancement in single quantum well GaAs/AlGaAs lasers

8 October 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (21) , 1989-1991
https://doi.org/10.1049/el:19921275

Abstract

The state filling effect in semiconductor quantum well lasers significantly affects the modulation dynamics. The state filling effect strongly depends on the optical confining layer structure. As a direct consequence of the reduction of the state filling effect in a properly designed graded index separate confinement heterostructure, a record 3dB bandwidth in excess of 9GHz has been obtained in uniformly pumped single quantum well GaAs/AlGaAs lasers by a careful tailoring of the device parameters.

Keywords

GRINSCH
GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE
MODULATION BANDWIDTH ENHANCEMENT
9 GHZ
MODULATION DYNAMICS
SEMICONDUCTOR QUANTUM WELL LASERS
SINGLE QUANTUM WELL GAAS-ALGAAS LASERS
OPTICAL CONFINING LAYER STRUCTURE
STATE FILLING EFFECT

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