Characterization of MOCVD-grown InP on InGaP GaAs (001)
- 20 March 1995
- journal article
- Published by Elsevier in Surface Science
- Vol. 326 (3) , 209-217
- https://doi.org/10.1016/0039-6028(94)00755-1
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Strain relaxation by coherent three-dimensional islanding in molecular-beam epitaxy of EuTe on PbTe(111)Physical Review B, 1993
- Oscillation of the lattice relaxation in layer-by-layer epitaxial growth of highly strained materialsPhysical Review Letters, 1993
- GaxIn1−xP multiple-quantum-wire heterostructures prepared by the strain induced lateral layer ordering processApplied Physics Letters, 1993
- Nanoscale InP Islands for Quantum Box Structures by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1993
- Formation of lateral quantum wells in vertical short-period superlattices by strain-induced lateral-layer ordering processApplied Physics Letters, 1992
- Serpentine superlattice quantum-wire arrays of (Al,Ga)As grown on vicinal GaAs substratesPhysical Review Letters, 1992
- A Model for Strain-Induced Roughening and Coherent Island GrowthEurophysics Letters, 1992
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990
- Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substratesJournal of Vacuum Science & Technology B, 1988
- Quantum well lasers--Gain, spectra, dynamicsIEEE Journal of Quantum Electronics, 1986