AlGaAs/GaAs based HEMTs, inverters, and ring oscillators with InGaAs, and AlGaAs etch-stop layers
- 20 June 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (13) , 1175-1177
- https://doi.org/10.1049/el:19910733
Abstract
Direct coupled FET logic (DCFL) inverters and 19 stage ring oscillators have been demonstrated with MBE grown AlGaAs/GaAs HEMTs using a dry-etching gate recess technology. Pseudomorphic In0.3Ga0.7As and Al0.3Ga0.7As were used as etch-stop layers for depleted (D) mode ungated, saturated resistors and enhancement (E) mode FETs, respectively, to achieve excellent uniformities of threshold voltage and saturation current. The maximum extrinsic transconductance of 1.2 μm gate length devices was 289 mS/mm with 1.35 Ωmm source resistance. The logic swing and noise margins were 0.5 and 0.2 V, respectively. The propagation delay of a 19 stage ring oscillator was 31.5 ps/stage at 300°C.Keywords
This publication has 1 reference indexed in Scilit:
- Threshold Voltage Control of Modfet ICPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986