Npn and pnp GaInP/GaAs heterojunction bipolar transistors grown by MOCVD

27 April 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (9) , 609-610
https://doi.org/10.1049/el:19890414

Abstract

Both Npn and Pnp heterojunction bipolar transistors were fabricated using the GaInP/GaAs system for the first time by MOCVD to investigate the band lineup of the GaInP/GaAs system. By comparing the collector current, current gain and offset voltage of the Npn and the Pnp HBTs, most of the bandgap difference was found to be in the valence band.

Keywords

COLLECTOR CURRENT
N-P-N DEVICES
OFFSET VOLTAGE
III-V SEMICONDUCTORS EPITAXIAL GROWTH
MOCVD
VALENCE BAND
CURRENT GAIN
HBTS
P-N-P DEVICES
BANDGAP DIFFERENCE
HETEROJUNCTION BIPOLAR TRANSISTORS
GAINP-GAAS

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