Quantum-Transport Theories and Multiple Scattering in Doped Semiconductors. II. Mobility ofn-type Gallium Arsenide

The quantum-conductivity formula derived in the previous paper is evaluated for screened Coulomb potentials. The mobility is obtained in the form $\mu ={\mu }_0{[1+{\delta }_B+{\delta }_M+{\delta }_D]}^{-1\mathrm{}}$, where ${\mu }_0$ is the Brooks-Herring mobility, ${\delta }_B$ is a correction due to higher Born approximations for the incoherent scattering, and ${\delta }_M$ and ${\delta }_D$ are, respectively, multiple scattering and dressing corrections. Analytic formulas, suitable for applications to specific semiconductors, are derived for the corrections. Applications are made to $n$-type GaAs, and it is found that the corrections are significant at all temperatures and concentrations of practical interest.