Low resistivep-type ZnSe: A key for an efficient blue electroluminescent device
- 1 March 1989
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 18 (2) , 105-109
- https://doi.org/10.1007/bf02657394
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Growth of p-type ZnSe:Li by molecular beam epitaxyApplied Physics Letters, 1988
- Metalorganic vapor phase epitaxy of low-resistivity p-type ZnSeApplied Physics Letters, 1988
- Molecular beam epitaxial growth of nitrogen-doped ZnSe with ion doping techniqueJournal of Crystal Growth, 1988
- The dependence on growth temperature of the photoluminescence properties of nitrogen-doped ZnSe grown by MOCVDJournal of Crystal Growth, 1988
- p-type conduction in ZnSe grown by temperature difference method under controlled vapor pressureJournal of Applied Physics, 1986
- Photoluminescence properties of nitrogen-doped ZnSe grown by molecular beam epitaxyJournal of Applied Physics, 1985
- The role of impurities in refined ZnSe and other II–VI semiconductorsJournal of Crystal Growth, 1982
- Donor-acceptor pair bands in ZnSePhysical Review B, 1979
- Pair Spectra and the Shallow Acceptors in ZnSePhysical Review B, 1973