Characterization of molecular beam deposited CuInSe2 thin films
- 1 January 1992
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 207 (1-2) , 265-269
- https://doi.org/10.1016/0040-6090(92)90135-x
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Lattice vibrational, thermal and mechanical properties of CuInSe2Solar Cells, 1986
- Preparation and characterization of vacuum deposited CuInSe2 thin filmsSolar Cells, 1986
- Growth and characterization of polycrystalline CuInSe2 thin filmsSolar Cells, 1986
- Use of an ion gauge beam flux monitor for resistivity control in CuInSe2 grown by molecular beam epitaxySolar Cells, 1982
- Growth of CuInSe2 by molecular beam epitaxyJournal of Applied Physics, 1980
- The Origin of the Difference in the Mechanical Strengths of Czochralski-Grown Silicon and Float-Zone-Grown SiliconJapanese Journal of Applied Physics, 1980
- Electrical and optical properties of thin p-type films prepared by vacuum evaporation from the chalcopyrite CuInSe2Thin Solid Films, 1979
- Growth of CuInSe2 films using molecular beam epitaxyJournal of Vacuum Science and Technology, 1979
- Growth of CuInSe2 on CdS using molecular beam epitaxyJournal of Applied Physics, 1979
- Raman and infrared spectra of thesystemPhysical Review B, 1976