Consideration of the relative frequency performance potential of inverted heterojunction n-p-n transistors

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Abstract
A recent study by Tan and Milnes of the expected frequency performance of GaAs homojunction and "conventional" AlGaAs-GaAs heterojunction transistors is here extended to include inverted configuration collector-up heterojunction transistors. It is shown that use of this configuration yields significant increases in high-frequency performance potential and results in a clear superiority for heterojunction devices over homojunction transistors.