Plasma-assisted epitaxy of InAs layers on GaAs
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 115 (1-4) , 309-312
- https://doi.org/10.1016/0022-0248(91)90759-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The Effect of Hydrogen Plasma on the Low Temperature Epitaxial Growth of InSbJapanese Journal of Applied Physics, 1989
- Characterization of mismatched InAsGaAs heterostructures grown by metalorganic chemical vapor depositionJournal of Crystal Growth, 1988
- Lattice relaxation of InAs heteroepitaxy on GaAsJournal of Crystal Growth, 1987
- First stages of the MBE growth of InAs on (001)GaAsJournal of Crystal Growth, 1987
- Plasma-assisted epitaxial growth of GaSb in hydrogen plasmaApplied Physics Letters, 1984