Optical absorption evidence for quantum confinement effects in porous silicon
- 28 February 1994
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 89 (7) , 587-589
- https://doi.org/10.1016/0038-1098(94)90169-4
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- First-principles analysis of electronic states in silicon nanoscale quantum wiresPhysical Review B, 1993
- Theory of the quantum confinement effect on excitons in quantum dots of indirect-gap materialsPhysical Review B, 1992
- Intrinsic origin of visible light emission from silicon quantum wires: Electronic structure and geometrically restricted excitonPhysical Review Letters, 1992
- Optical properties of porous siliconCanadian Journal of Physics, 1992
- Optical properties of porous silicon: A first-principles studyPhysical Review Letters, 1992
- Theory of optical properties of quantum wires in porous siliconPhysical Review B, 1992
- Preparation and Properties of Si Microcrystals Embedded in SiO2 Glass FilmsJapanese Journal of Applied Physics, 1991
- Optical studies of the structure of porous silicon films formed in p-type degenerate and non-degenerate siliconJournal of Physics C: Solid State Physics, 1984
- Structure of Porous Silicon Layer and Heat‐Treatment EffectJournal of the Electrochemical Society, 1978
- Electropolishing Silicon in Hydrofluoric Acid SolutionsJournal of the Electrochemical Society, 1958