Pressure Study of Photoconductivity in Indium Antimonide I. Low‐Concentration n‐Type at 77 K. Pressure‐Dependent Capture Coefficient of a Hole‐Trapping Center
- 1 July 1984
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 124 (1) , 411-421
- https://doi.org/10.1002/pssb.2221240145
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- On the deep impurity level in n‐InSbPhysica Status Solidi (b), 1982
- Capture and emission of electrons by the resonant state strongly coupled to the lattice in-InSbPhysical Review B, 1982
- Pressure‐Induced Slow Relaxation of the Free Electron Concentration in Undoped n‐Type InSbPhysica Status Solidi (b), 1976
- [Russian Text Ignored]Physica Status Solidi (b), 1964