A modified horizontal gradient-freeze technique for growth of dislocation-free Si-doped GaAs single crystals
- 2 December 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 65 (1-3) , 243-248
- https://doi.org/10.1016/0022-0248(83)90056-8
Abstract
No abstract availableKeywords
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