Formation of End-of-Range Defects in Silicon at Low Temperatures
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Optimization of the germanium preamorphization conditions for shallow-junction formationIEEE Transactions on Electron Devices, 1988
- A systematic analysis of defects in ion-implanted siliconApplied Physics A, 1988
- Elimination of end-of-range and mask edge lateral damage in Ge+ preamorphized, B+ implanted SiApplied Physics Letters, 1986
- Rapid thermal annealing of dopants implanted into preamorphized siliconJournal of Applied Physics, 1985