Radiation Damage of SiO2 Surface Induced by Vacuum Ultraviolet Photons of High-Density Plasma

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Abstract
The formation of a surface-damaged layer of gate SiO2 induced by exposure to plasma for gate etching led to the increase in etch rate of SiO2 during HF wet treatment. The effects of vacuum ultraviolet (VUV) photons from various gas plasmas generated by an electron cyclotron resonance (ECR) plasma system and a helicon plasma system were evaluated. It was found that the depth of the damaged layer depends on the energy and penetration depth of VUV radiation. The damaged layer grew exponentially with distance from the surface and was extremely disordered, making it more susceptible to the HF etchant.

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