Hot electron noise in n-channel JFETs between 150 and 300°K
- 31 October 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (10) , 1259-1260
- https://doi.org/10.1016/0038-1101(78)90375-1
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Noise due to donors in n-channel silicon JFETsSolid-State Electronics, 1978
- Noise of hot carriers in the channel of n silicon junction gate field effect transistorsSolid-State Electronics, 1978