Ta-O (Ta-oxide) and Nb-O (Nb-oxide) Film Deposition Using an Electron Cyclotron Resonance Plasma
- 1 June 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (6A) , L411
- https://doi.org/10.1143/jjap.24.l411
Abstract
The low temperature depositions (under 200°C) of Ta-O and Nb-O films are investigated using microwave ECR (electron cyclotron resonance) plasma deposition with Ta-halide or Nb-halide and O2 as raw material gases. High deposition rate (400 Å/min) is easily obtained with Ta-chloride and Nb-chloride, however, with Ta-fluoride and Nb-fluoride the deposited films at 200 Å/min have low resistance against humidity due to their fluoride content. The refractive indices of the Ta-O and Nb-O are 2.15 and 2.2 at 6328 Å. The structures of both films are amorphous. They are stable up to 400°C.Keywords
This publication has 6 references indexed in Scilit:
- Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance PlasmaJapanese Journal of Applied Physics, 1983
- E-beam deposition characteristics of reactively evaporated Ta2O5 for optical interference coatingsJournal of Vacuum Science and Technology, 1981
- Chemical Vapor Deposition of Tantalum Pentoxide Films for Metal‐Insulator‐Semiconductor DevicesJournal of the Electrochemical Society, 1976
- Optical waveguide characteristics of reactive dc-sputtered niobium pentoxide filmsApplied Physics Letters, 1975
- Zur Kenntnis der TonerdeZeitschrift für anorganische und allgemeine Chemie, 1952
- Preparation and Physical Properties of Niobium Pentafluoride1Journal of the American Chemical Society, 1952