Quantitative Analysis of In Density in Semi-Insulating GaAs by Photoluminescence
- 1 November 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (11R) , 1503-1505
- https://doi.org/10.1143/jjap.24.1503
Abstract
Photoluminescence (PL) measurements at 4.2 K were performed on In-doped semi-insulating GaAs (In x Ga1-x As) grown as a nearly dislocation-free substrate for GaAs large-scale integrated circuits. The In composition x of the sample wafers was calibrated by inductively-coupled-plasma emission spectrometry before the PL measurement. A small variation of In composition in the region 0 ≤x ≤0.0139 was detected by the peak-energy shift of exciton-recombination emissions Δh ν (eV). The value of x could be estimated from Δh ν using the equation x=- Δh ν/1.505 without destruction of the sample wafers. It was found that the emission of neutral-acceptor-bounded-exciton recombination observed in all samples was useful for the measurement of the x value.Keywords
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