Defect creation associated with phosphorus doping as elucidated by photoinduced absorption, photoinduced absorption detected ESR and ODMR
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 77-78, 519-522
- https://doi.org/10.1016/0022-3093(85)90712-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Doping-induced and photo-induced modification of electron-emission rate at localized states in P-doped a-Si:HJournal of Non-Crystalline Solids, 1983
- Doping and the Fermi Energy in Amorphous SiliconPhysical Review Letters, 1982
- Ionic Conductivity of Impure Polar CrystalsPhysical Review B, 1954