Radial yield variations in semiconductor wafers
- 1 March 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Circuits and Devices Magazine
- Vol. 3 (2) , 42-47
- https://doi.org/10.1109/mcd.1987.6323237
Abstract
Detailed examination of yield data from several different products in two different technologies and two different wafer sizes has shown a pronounced radial dependence. In all cases, the yield profile has a distinct knee starting at about 10 mm from the wafer periphery, dropping steeply within the final 5 mm. The similarity in yield profile near the periphery across all the products examined suggests that edge yield loss is of a gross nature and is not caused by design, technology, wafer size, or random defects.Keywords
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