Phonons at interfaces: I. A microscopic approach

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Abstract
The authors present a full three-dimensional microscopic approach to the scattering of phonons at interfaces using a valence force field model and a dynamical matrix calculation of the interface region. Phonon scattering rates for transmission and reflection are shown to differ markedly from continuum models near the band edges and in the optic branches. Localised interface states are seen for certain material combinations and a simple explanation for their appearance is given. There are no localised modes in the model at the perfect GaAs/AlAs interface.