Ultrafast pump-and-probe spectroscopy in CdSe: Hot-carrier and exciton dynamics
Open Access
- 15 September 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 46 (11) , 6750-6759
- https://doi.org/10.1103/physrevb.46.6750
Abstract
An extensive study by means of femtosecond pump-and-probe spectroscopy has clarified the ultrafast dynamics of photogenerated carriers in a CdSe thin film. Under band-to-band excitation, a nonther- malized hot-carrier distribution was observed immediately upon excitation. This distribution was observed in a 200-meV broad energy range extending from the pump energy to its low-energy side. Its low-energy tail indicates that carrier-LO-phonon scattering competes with carrier-carrier scattering in the thermalization process. From the ratio of nonthermalized to the total carriers, the thermalization time was estimated to be 20–40 fs. In the wake of thermalization, cooling of photogenerated carriers was observed. With an increase of the excitation density up to , the carrier cooling rate was slower. The cooling rate observed at 4.2 K was comparable to that at room temperature. The observed cooling rate was slower than that predicted by a theoretical calculation which took into account screening of the carrier-phonon interaction. This is ascribed to hot-phonon effects of LO-phonons and TO phonons. Under resonant excitation of the A exciton, a 42-meV energy broadening of the B-exciton structure was observed. This broadening is caused by collisions between the A exciton and the B exciton. This is an example of the scattering process between different kinds of excitons. Analysis indicates that the A-exciton–B-exciton scattering time is 31 fs. This time is well explained by a simple theory based on the rigid-sphere scattering model. The broadening decreases with a time constant on the order of hundreds of picoseconds. This time constant is well explained by the lifetime of the excitons. Under resonant excitation of the B exciton, a fast recovery of the bleaching was observed at the B exciton. The recovery time of 0.9 ps is explained as the transformation time of B excitons into A excitons by LO-phonon emission. The obtained time constant agrees with the calculated scattering time based on the Fröhlich interaction within an order of magnitude.
Keywords
This publication has 28 references indexed in Scilit:
- Probing Semiconductors with Femtosecond PulsesPhysics Today, 1990
- Femtosecond intervalley scattering in GaAsApplied Physics Letters, 1988
- Femtosecond Photon Echoes from Band-to-Band Transitions in GaAsPhysical Review Letters, 1988
- Femtosecond Carrier Thermalization in Dense Fermi SeasPhysical Review Letters, 1988
- Femtosecond dynamics of highly excited carriers in AlxGa1−xAsApplied Physics Letters, 1987
- Femtosecond carrier dynamics in GaAsApplied Physics Letters, 1987
- Femtosecond optical measurement of hot-carrier relaxation in GaAs, AlGaAs, and GaAs/AlGaAs multiple quantum well structuresApplied Physics Letters, 1986
- Hot carriers in quasi-2-D polar semiconductorsIEEE Journal of Quantum Electronics, 1986
- Femtosecond Excitation of Nonthermal Carrier Populations in GaAs Quantum WellsPhysical Review Letters, 1986
- Subpicosecond Spectral Hole Burning Due to Nonthermalized Photoexcited Carriers in GaAsPhysical Review Letters, 1985