Characterization of a rapid thermal anneal TiNxOy/TiSi2 contact barrier
- 1 July 1989
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 18 (4) , 493-499
- https://doi.org/10.1007/bf02657778
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Simultaneous formation of TiN and TiSi2 by lamp annealing in NH3 ambient and its application to diffusion barriersJournal of Applied Physics, 1987
- Formation of Titanium Nitride/Silicide Bilayers by Rapid Thermal Anneal in NitrogenMRS Proceedings, 1985
- Special ApplicationsPublished by Elsevier ,1983
- The use of titanium-based contact barrier layers in silicon technologyThin Solid Films, 1982
- Application of Ti: W barrier metallization for integrated circuitsThin Solid Films, 1978
- SLT Device Metallurgy and its Monolithic ExtensionIBM Journal of Research and Development, 1969