Robust, wide range hydrogen sensor
- 1 January 1992
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 521-524
- https://doi.org/10.1109/iedm.1992.307415
Abstract
A new robust, wide-range hydrogen sensor technology integrates catalytic gate transistors and resistors with a baseline CMOS process. Pd or PdNi gate transistors detect low concentrations of hydrogen (ppm) and Pd or PdNi thin film resistors sense higher concentrations of hydrogen (up to 100%). Fabrication of both sensors on the same die allows detection of hydrogen over a dynamic range of 6 orders of magnitude. On-chip power transistor heaters and diode thermometers allow accurate chip temperature control.<>Keywords
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