Low-pressure MOVPE growth of Sn-doped GaAs

8 December 1983

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 19 (25-26) , 1062-1064
https://doi.org/10.1049/el:19830721

Abstract

Sn-doped GaAs layers have been grown by low pressure MOVPE. For carrier concentrations n ≤ 1.5 × 10¹⁹ cm⁻³, the layers are characterised by good surface morphology, high mobility and negligible compensation. At higher carrier concentration, the surface morphology deteriorates and Sn surface accumulation is detected by AES.

Keywords

AES
LOW PRESSURE METALORGANIC VAPOUR PHASE EPITAXY
GAAS:SN
CARRIER CONCENTRATIONS
SURFACE MORPHOLOGY
HIGH MOBILITY
SN SURFACE ACCUMULATION
MOVPE GROWTH
SEMICONDUCTOR GROWTH

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