Electrical properties of CuInSe2 single crystals grown by the vertical bridgman technique
- 16 February 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 75 (2) , K199-K203
- https://doi.org/10.1002/pssa.2210750265
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Epitaxial layers of CuInSe2 on GaAsThin Solid Films, 1978
- Electrical properties of n-type CuInSe2 single crystalsSolid State Communications, 1978
- A Generalized Approach to the Defect Chemistry of Ternary CompoundsZeitschrift für Physikalische Chemie, 1978
- Electron probe microanalysis of CuInSe2 and CuGaSe2 crystalsCrystal Research and Technology, 1978
- Analysis of the electrical and luminescent properties of CuInSe2Journal of Applied Physics, 1975