Interaction of evaporated palladium thin films with gallium arsenide
- 1 May 1981
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 79 (3) , 251-256
- https://doi.org/10.1016/0040-6090(81)90313-8
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Recent advances in epitaxyPublished by Elsevier ,2002
- Contact reactions in Pd/GaAs junctionsJournal of Applied Physics, 1979
- Adsorption-desorption studies of Zn on GaAsSurface Science, 1977
- Isothermal desorption spectroscopy for the study of two-dimensional condensed phases: Investigation of the Au (deposit)/Si(111) (substrate) system; application to the Xe/(0001)graphite systemSurface Science, 1977
- Bonding direction and surface-structure orientation on GaAs (001)Journal of Applied Physics, 1976
- Epitaxy of noble metals and (111) surface superstructures of silicon and germanium part I: Study at room temperatureThin Solid Films, 1976
- Metallization scheme for n−GaAs Schottky diodes incorporating sintered contacts and a W diffusion barrierApplied Physics Letters, 1975
- Adsorption of Zn on GaAsSurface Science, 1973
- GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) FaceJournal of Applied Physics, 1971
- Low-energy electron diffraction and surface structural chemistryProgress in Solid State Chemistry, 1965