Laser photoelectron spectrometry of the negative ions of silicon and its hydrides

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Abstract
Fixed−frequency laser photoelectron spectrometry has been utilized to study the ions Si−, SiH−, and SiH−2. In each case, the photodetached electron energy spectrum consists primarily of sharp, easily assignable peaks. The electron affinities of Si, SiH, and SiH2 have been determined to be (1.385±0.005) eV, (1.277±0.009) eV, and (1.124±0.020) eV, respectively. Two bound excited states attributed to 2D and 2P terms have been observed for Si−, and their binding energies determined. Similarly, two bound excited states, assigned to 1Δ and 1Σ+ symmetry, have been discovered in SiH−. The internuclear distance re in the ground state of SiH− has been determined by a Franck−Condon factor analysis to be (1.474±0.004) Å. In addition, spectroscopic constants of the excited states have been deduced. Transitions from the ground state of SiH− to both the 1A1 and 3B1 states of SiH2 have been observed; unlike the case of CH2, the 1A1 state is the lower in energy.

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