Deposition of nitrogen doped tetrahedral amorphouscarbon (ta-C:N) films by ionbeam assisted filtered cathodic vacuum arc
- 17 July 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (15) , 1339-1340
- https://doi.org/10.1049/el:19970901
Abstract
An alternative approach to deposit ta-C:N films by ion assisted filtered cathodic vacuum arc (IAFCVA) is presented and compared with ta-C films prepared by FCVA under nitrogen partial pressure. The electronic properties are strongly dependent on nitrogen partial pressure for both methods although the efficiency of doping is higher for IAFCVAKeywords
This publication has 1 reference indexed in Scilit:
- States in the gapJournal of Non-Crystalline Solids, 1972