Fast neutron effects on transistor scattering parameters

Abstract

It has not been possible in the past to characterize a transistor or other semiconductor device with regard to its performance in a fast neutron environment when the device is operated at high frequencies. Using the scattering (s-) parameter concept, which regards a device as a two-port "black box", a full characterization of the trends in the neutron bombarded high-frequency performance of a typical transistor can be made.

Keywords

PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMPLIFIERS
FAST NEUTRONS
MICROWAVES
PERFORMANCE
RADIATION EFFECTS
TRANSISTORS
AMPLIFIERS/RADIATION EFFECTS ON HIGH-FREQUENCY PERFORMANCE OF TRANSISTOR
SCATTERING PARAMETER CHARACTERIZATION OF FAST NEUTRON
NEUTRONS
FAST/EFFECTS ON HIGH-FREQUENCY PERFORMANCE OF TRANSISTORS
SCATTERING PARAMETER CHARACTERIZATION OF
TRANSISTORS/RADIATION EFFECTS ON HIGH-FREQUENCY PERFORMANCE OF

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