Manufacturability of 0.1- mu m millimeterwave low-noise InP HEMTs
- 31 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 345-347 vol.1
- https://doi.org/10.1109/mwsym.1993.276807
Abstract
Reports on the manufacturability of state-of-the-art passivated 0.1- mu m low-noise InP HEMTs (high electron mobility transistors). These HEMTs offer an attractive, cost-effective solution to millimeter-wave satellite communications. The authors discuss their yield and reproducibility, as well as typical performance at V- and W-bands.<>Keywords
This publication has 2 references indexed in Scilit:
- A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMTIEEE Microwave and Guided Wave Letters, 1991
- A novel electron-beam exposure technique for 0.1-μm T-shaped gate fabricationJournal of Vacuum Science & Technology B, 1990